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ESR9: Analysis of the charge sharing effect in the SET sensitivity of bulk 45 nm standard cell layouts under heavy ions

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Y.Q. Aguiar (ESR9), F. Wrobel, J.L. Autran, P. Leroux, F. Saigné, A.D. Touboul, V. Pouget

Microelectronics Reliability, Vo. 88-90, Pages 920-924, September 2018

Check out paper at this link.

Publications